THE SMART TRICK OF GERMANIUM THAT NOBODY IS DISCUSSING

The smart Trick of Germanium That Nobody is Discussing

s is the fact on the substrate substance. The lattice mismatch brings about a substantial buildup of pressure Power in Ge levels epitaxially developed on Si. This pressure Power is mainly relieved by two mechanisms: (i) technology of lattice dislocations within the interface (misfit dislocations) and (ii) elastic deformation of both equally the sub

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